Atom Probe Tomography of Grain Boundaries in Ion Conducting Oxides

Atom probe tomography of swift ion irradiated multilayers

Nanometer scale layered systems are well suited to investigate atomic transport processes induced by high-energy electronic excitations in materials, through the characterization of the interface transformation. In this study, we used the atom probe technique to determine the distribution of the different elements in a (amorphous-Fe2Tb 5 nm/hcp-Co 3 nm)20 multilayer before and after irradiation...

Focused ion beam sample preparation for atom probe tomography

Atom Probe (AP) tomography is maturing into a routine method for the atomic resolution compositional analysis of metals, semiconductors and some polymers. This is often combined with a Transmission Electron Microscope (TEM) analysis of the same region of interest. The Focused Ion Beam (FIB) microscope has evolved as an essential tool for site and orientation specific sample preparation for such...

Atom probe tomography in nanoelectronics

The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants a...

Toward atom probe tomography of microelectronic devices

Atom Probe Tomography of Oxide Scales

Atom probe tomography, APT, is the only microstructural method that can routinely analyse and position individual atoms in a material with a spatial resolution of 0.1-0.5 nm. Recent implementation of pulsed-laser to APT made investigation of less conducting materials, such as oxides, feasible. In this paper a short description of the principle of the techniques is presented. It is followed by e...